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IEI | Polymer Etching with Remote Source Magnetron  |
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 0.7μm line/space in 4.0μm polyimide, lift-off profile  |
MRIE may be used for high rate anisotropic processes in easily-etched materials. Exceptional profile control is possible as shown by the etched cross section in thick polyimide that was etched at rate of 1.2 μm/min in oxygen. MRIE may also be used to pattern difficult-to-etch materials in safe, non-agressive chemistries. For example PZT (Lead Zirconium Titanate), GaN (Gallium Nitride) and AlGaN (Aluminum Gallium Nitride), as well as Aluminum Oxide have all been etched at usefully high rates in very low pressure MRIE.
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